CSD87333Q3D

Overview

The CSD87333Q3D is a dual N-channel NexFET Power Block from Texas Instruments, housed in an 8-pin VSON package. It features a drain-source breakdown voltage of 30 V and a continuous drain current of 15 A. The device exhibits a typical on-resistance of 14.3 mΩ at room temperature. Gate-source voltage limits are specified between -8 V and +8 V, with a threshold voltage of 1.2 V. Total gate charge is 3.5 nC. Switching characteristics include a rise time of 3.9 ns and a fall time of 2.2 ns. The component operates within a junction temperature range of -55°C to +150°C and supports a power dissipation of 1.5 W.

Feature Summary

• Integrated synchronous buck configuration combining high-side and low-side MOSFETs in a single compact package.
• Optimized for high-duty-cycle applications through minimized on-resistance and fast switching transitions.
• Enhanced thermal performance via exposed pad design for efficient heat transfer to the PCB.

Applications

• High-efficiency synchronous buck converters
• Point-of-load (POL) voltage regulation modules
• H-bridge motor control circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and electrical specifications. Ensure that the procurement documentation matches the exact part number variant required for the design. Cross-reference the RoHS and REACH compliance status with the latest regulatory filings before finalizing orders.

Selection Notes

Select this component when a compact solution for 30-V synchronous rectification is required. The low gate charge facilitates driving by standard logic-level controllers without external buffers. Evaluate the thermal resistance parameters relative to the target PCB copper area to ensure the junction temperature remains within safe operating limits under maximum load conditions.

Part Context

This device belongs to the CSD8733x series of NexFET Power Blocks designed for space-constrained power management applications. It integrates two N-channel MOSFETs into a single monolithic structure, reducing footprint compared to discrete solutions. The series targets high-frequency DC-DC conversion where efficiency and size are critical constraints.

Replacement Considerations

Direct replacements must match the 30-V rating, 8-pin VSON package, and dual N-channel configuration. Verify that substitute components offer comparable Rds(on) and gate charge values to maintain switching performance. Check for identical pin assignments to avoid PCB redesign requirements during implementation.