CSD87384M

$1.39

Description：MOSFET 2N-CH 30V 30A 5PTAB
Series：NexFET™

SKU:ac0775ad0c79 Category: FET, MOSFET Arrays Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 30A 5PTAB
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Half Bridge)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：30A
Rds On (Max) @ Id, Vgs：7.7mOhm @ 25A, 8V
Vgs(th) (Max) @ Id：1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1150pF @ 15V
Power - Max：8W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：5-LGA
Supplier Device Package：5-PTAB (5x3.5)
Grade：-
Qualification：-

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CSD87384M

Overview

The CSD87384M is a dual N-channel NexFET Power Block II A MOSFET manufactured by Texas Instruments. It features a PTAB-5 package and operates within a temperature range of -55°C to +150°C. Key electrical parameters include a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 30 A. The device exhibits low on-resistance values of 6.4 mΩ and 1.95 mΩ, with gate-source voltages rated at -8 V and 10 V. Gate charge (Qg) ranges from 7.1 nC to 31 nC, while power dissipation (Pd) is specified at 8 W. Transition times include fall times of 7.6 ns and 8.2 ns, and rise times of 56 ns and 49 ns.

Feature Summary

Integrated dual N-channel configuration for synchronous buck applications
Low thermal resistance design utilizing PTAB-5 packaging
Enhancement mode operation with optimized switching characteristics

Applications

Synchronous buck converter designs
Point-of-load regulation modules
DC-DC conversion systems requiring high efficiency

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation. Ensure storage conditions adhere to moisture sensitivity level requirements. Validate part markings against datasheet specifications to prevent counterfeit risks during acquisition.

Selection Notes

Evaluate thermal management capabilities based on the 8 W power dissipation rating. Consider the 30 A current capacity relative to load requirements. Assess gate drive compatibility with the specified voltage limits. Review transition times for high-frequency switching performance needs. Compare package dimensions against PCB layout constraints.

Part Context

This component belongs to the CSD87384 series of NexFET Power Blocks. It represents an evolution in integrated power solutions designed for compact form factors. The PTAB-5 package distinguishes it from standard discrete MOSFETs by offering improved thermal performance and reduced footprint compared to traditional packages.