CSD87502Q2T

$0.89

Description：MOSFET 2N-CH 30V 5A 6WSON
Series：NexFET™

SKU:b0a480dc1d5a Category: FET, MOSFET Arrays Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 5A 6WSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：5A
Rds On (Max) @ Id, Vgs：32.4mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：353pF @ 15V
Power - Max：2.3W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-WDFN Exposed Pad
Supplier Device Package：6-WSON (2x2)
Grade：-
Qualification：-

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CSD87502Q2T

Overview

The CSD87502Q2T is a dual N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a 30 V drain-source breakdown voltage and supports a continuous drain current of 5 A. The device exhibits a low on-resistance of 35 mOhms, with a gate threshold voltage of 1.2 V and total gate charge of 6 nC. Electrical performance includes rise and fall times of 11 ns and 3 ns respectively, alongside a forward transconductance of 75 S. It operates within a temperature range of -55 °C to +150 °C and dissipates up to 2.3 W of power. The component utilizes a WSON-FET-6 surface-mount package.

Feature Summary

Dual N-channel configuration for space-efficient circuit design
NexFET technology optimized for low conduction losses
Enhancement mode operation with fast switching characteristics

Applications

Low-voltage DC-DC converter output stages
Load switching in portable electronic devices
Power management circuits requiring high efficiency

Procurement Notes

Verify the specific ordering suffix against official Texas Instruments documentation to confirm exact packaging options such as reel or cut tape specifications. Ensure compliance with RoHS directives and REACH standards as defined in the manufacturer's datasheet before finalizing procurement orders.

Selection Notes

Select this component when designing systems requiring a 30 V rating with dual channel integration. The 35 mOhm on-resistance suits applications prioritizing thermal efficiency at 5 A loads. Confirm that the WSON-FET-6 package dimensions align with the target PCB layout constraints.

Part Context

This part belongs to the CSD87502Q2 series from Texas Instruments. It is categorized under silicon-based enhancement mode MOSFETs. The NexFET branding indicates a focus on advanced power switching performance within the company's discrete semiconductor portfolio.