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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 10A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Source
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta)
- Rds On (Max) @ Id, Vgs：13.5mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1020pF @ 15V
- Power - Max：15.6W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：8-VSON (3.3x3.3)
- Grade：-
- Qualification：-
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Overview
The CSD87503Q3E is a dual N-channel MOSFET from Texas Instruments, utilizing NexFET technology. It features a 30 V drain-source breakdown voltage and supports a continuous drain current of 10 A. The device offers a low on-resistance of 17.3 mOhms at Vgs = 10 V. It operates within a temperature range of -55 °C to +150 °C junction temperature. Key switching parameters include a gate charge of 42.8 nC, with rise and fall times of 40 ns and 8 ns respectively. The component is housed in an 8-pin VSON package.
Feature Summary
- Dual N-channel configuration for space-efficient circuit designs
- NexFET technology optimized for low conduction losses
- Enhanced thermal performance supporting high junction temperatures
Applications
- DC-DC converter synchronous rectification
- Low-side switching in power management circuits
- Motor control applications requiring dual channel isolation
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through the designated documentation links provided by authorized distributors. Cross-reference the part number with the latest revision history to avoid obsolete stock issues during procurement planning.
Selection Notes
Select this component when a compact dual N-channel solution is required for 30 V systems. Ensure the design accounts for the 10 A continuous current rating under appropriate thermal conditions. Verify that the gate drive voltage aligns with the specified threshold characteristics for optimal Rds(on) performance.
Part Context
This device belongs to the CSD87503 series of NexFET power MOSFETs. It is designed for high-efficiency power conversion applications where small footprint and low loss are critical. The VSON-8 package provides improved thermal dissipation compared to standard SOT packages.
Replacement Considerations
Consult the official Texas Instruments substitution guide for verified alternatives. Check pinout compatibility and electrical parameter margins before replacing with similar dual N-channel MOSFETs from other manufacturers.
