CSD87588N

Overview

The CSD87588N is a dual N-channel NexFET Power Block II MOSFET designed for synchronous buck converter applications. It integrates two channels in a compact PTAB-5 package (3x2.5 mm). Key electrical parameters include a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 25 A at 25°C. The device features a maximum on-resistance (Rds(on)) ranging from 9.6 mΩ to 10.4 mΩ depending on test conditions, with a gate charge (Qg) as low as 2.8 nC to 4.1 nC. It operates within a temperature range of -55°C to +150°C junction temperature and supports logic-level gate drive.

Feature Summary

• Integrated dual N-channel configuration optimized for half-bridge and synchronous rectification topologies.
• Logic-level gate compatibility allows direct drive from standard microcontrollers or gate drivers without level shifting.
• Compact surface-mount packaging minimizes footprint while maintaining thermal performance for high-density designs.

Applications

• Synchronous buck converters in point-of-load (POL) power supplies
• Half-bridge driver stages in DC-DC conversion circuits
• Low-voltage motor control applications requiring efficient switching

Procurement Notes

Verify the specific ordering suffix when purchasing, as it determines the tape-and-reel quantity or cut-tape format. Confirm RoHS compliance status through the manufacturer's official datasheet or certification documents prior to integration. Ensure the component matches the required PTAB-5 package dimensions for PCB layout compatibility.

Selection Notes

Select this component for applications requiring a 30 V rating and up to 25 A continuous current in a minimal footprint. Evaluate the Rds(on) value against thermal constraints, as higher currents increase conduction losses. Consider the gate charge specifications when designing gate drive circuits to ensure adequate switching speed and minimize switching losses at the target frequency.

Part Context

This part belongs to Texas Instruments' NexFET Power Block II family, which focuses on integrating MOSFETs with optimized parasitic inductance for high-frequency switching. The PTAB-5 package is specifically engineered for power density improvements over traditional discrete packages, making it suitable for modern compact electronic devices.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout and thermal characteristics if considering alternative manufacturers' dual N-channel MOSFETs in the same voltage and current class.