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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 15A 8SOIC
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：15A
- Rds On (Max) @ Id, Vgs：15mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1400pF @ 30V
- Power - Max：2.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The CSD88537NDT is a dual N-channel NexFET power MOSFET manufactured by Texas Instruments. It integrates two independent N-channel MOSFETs within a single 8-pin SOIC package, rated for a drain-source voltage of 60 V and a continuous drain current of 15 A per channel at 25°C. The device features a maximum on-resistance of 28 mΩ at Vgs = 10 V. Key electrical parameters include a gate charge of 9.4 nC and an input capacitance of 741 pF at 30 V. The component operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Dual configuration integrating two N-channel MOSFETs in a compact surface-mount package
- Optimized low on-resistance characteristics for efficient power switching applications
- High-speed switching capability supported by low gate charge and input capacitance
Applications
- DC-DC converter output stages
- Synchronous rectification circuits
- Power management modules requiring space-constrained dual-switch solutions
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and tape-and-reel specifications. Ensure that the procurement source provides valid traceability data consistent with Texas Instruments quality standards. Cross-reference the part number with authorized distributor catalogs to confirm current production status and availability constraints before finalizing purchase orders.
Selection Notes
Select this component when a design requires two isolated N-channel switches in a limited footprint. Evaluate thermal performance based on the 2.1 W power dissipation rating and the thermal resistance values provided in the datasheet. Confirm that the 60 V breakdown voltage and 15 A current capacity meet the circuit requirements under all operating conditions.
Part Context
This component belongs to the NexFET family from Texas Instruments, designed for high-efficiency power management. The CSD88537NDT serves as a dual-channel variant within the broader CSD8853x series, offering integrated switching solutions compared to discrete single-channel alternatives.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided reference material. Verify compatibility with alternative dual MOSFET packages such as the CSD88539ND only through direct parameter comparison with official manufacturer datasheets.
