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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 22VSON-CLIP
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：2.1mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：27nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：4840pF @ 30V
- Power - Max：12W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：22-PowerTFDFN
- Supplier Device Package：22-VSON-CLIP (5x6)
- Grade：-
- Qualification：-
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Overview
The CSD88599Q5DCT is a dual N-channel synchronous buck NexFET power MOSFET manufactured by Texas Instruments. It features a VDS of 60 V and a continuous drain current (ID) of 40 A. The device exhibits a maximum RDS(on) of 1.7 mΩ at VGS = 10 V. Gate-source voltage limits are ±20 V, with a threshold voltage (VGS(th)) of 1.4 V. Total gate charge (Qg) is 43 nC. The component operates within a temperature range of -55 °C to +150 °C, with a power dissipation rating of 12 W. It utilizes a VSON-CLIP-22 package for surface mount installation.
Feature Summary
- Dual channel configuration designed for synchronous buck applications
- NexFET technology optimized for low conduction losses
- Enhancement mode operation with standard logic-level gate drive compatibility
Applications
- Synchronous buck converter circuits
- DC-DC power supply modules
- Point-of-load regulation systems
Procurement Notes
Verify the specific suffix 'T' indicates tape and reel packaging when ordering. Confirm RoHS compliance status through official datasheets. Ensure the VSON-CLIP-22 footprint matches the PCB layout requirements. Check for any lead time variations due to high volume demand as noted by distributors.
Selection Notes
Select this component for 60 V synchronous rectification needs requiring 40 A continuous current. The 1.7 mΩ RDS(on) supports efficient power conversion. Verify thermal management capabilities given the 12 W power dissipation limit in the VSON-CLIP-22 package. Ensure gate drive voltage aligns with the 1.4 V threshold and ±20 V maximum ratings.
Part Context
This part belongs to the CSD88599Q5DC series from Texas Instruments. It is a silicon-based N-channel MOSFET. The product falls under the NexFET trademark category. It is categorized as a dual enhancement mode transistor within the broader MOSFET family.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult manufacturer documentation for direct pin-compatible alternatives.
