ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：N-CHANNEL IGBT, 900V, 60A
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The CT60AM-18F#G02 is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. This component features a maximum collector-emitter voltage rating of 900V and a continuous collector current capacity of 60A. It is designed for high-power switching applications requiring robust performance and reliability in industrial environments.
Feature Summary
- N-channel IGBT configuration for efficient power switching
- High voltage capability suitable for demanding industrial loads
- RoHS compliant construction for environmental safety
Applications
- Industrial motor drives
- Inverter circuits
- Power supply systems
Procurement Notes
Verify the specific suffix #G02 against official Renesas documentation to confirm lead-free status and packaging details. Ensure compatibility with existing thermal management solutions given the 60A current rating. Cross-reference part numbers carefully as suffixes may indicate variations in tape and reel specifications or testing criteria.
Selection Notes
Select this component for applications requiring 900V blocking voltage and 60A continuous current handling. Consider thermal resistance characteristics when designing heat sinks. Verify gate drive requirements align with standard IGBT driver outputs. Evaluate switching speed requirements against application needs for optimal efficiency.
Part Context
This IGBT belongs to Renesas' discrete power semiconductor portfolio, targeting medium to high-power industrial applications. It complements other components in motor control and power conversion systems. The device supports designs needing reliable switching under high voltage conditions typical in AC/DC converters and inverters.
Replacement Considerations
Consult official Renesas cross-reference guides for verified substitutes. Generic replacements may differ in saturation voltage or switching times. Validate pinout compatibility and thermal package dimensions before substitution.
