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Product Detailed Parameters
- Description：MOSFET N-CH 20V 160MA TLM3D6D8
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：160mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.2V, 4.5V
- Rds On (Max) @ Id, Vgs：3Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.46 nC @ 4.5 V
- Vgs (Max)：8V
- Input Capacitance (Ciss) (Max) @ Vds：9 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：125mW (Ta)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TLM3D6D8
- Package / Case：3-XFDFN
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Overview
The CTLDM3590 TR is a surface-mount N-channel enhancement-mode silicon MOSFET manufactured by Central Semiconductor Corp. It features a TLM3D6D8 leadless package with dimensions of 0.6mm x 0.8mm x 0.4mm. The device supports a drain-source voltage of 20V and a continuous drain current of 160mA, with a maximum power dissipation of 125mW at 25°C. Electrical characteristics include a low on-resistance ranging from 1.5Ω to 10Ω depending on gate drive conditions, and a total gate charge of 0.458nC.
Feature Summary
- Ultra-small, ultra-low profile leadless surface mount package
- Beneficially low on-resistance and threshold voltage
- Very low gate charge for high-speed pulsed applications
- ESD protection up to 2kV
Applications
- Load/Power Switches
- Boost/Buck Converters
- Battery Charging/Power Management
- High speed pulsed amplifiers and drivers
Procurement Notes
Verify the End of Life status before procurement. The datasheet indicates that devices in the TLM3D6D8 package are discontinued. Confirm availability through official engineering channels as no direct replacement part numbers are listed in the public documentation.
Selection Notes
Select this component for designs requiring an extremely compact footprint and low gate charge. Ensure the application operates within the 125mW power dissipation limit and verify that the 20V drain-source voltage rating accommodates peak circuit voltages.
Part Context
This component belongs to the Central Semiconductor discrete semiconductor product line. It is specifically designed as a small-signal switching device utilizing enhancement-mode technology. The TLM3D6D8 package provides a specialized leadless form factor distinct from standard SOT or TO packages.
Replacement Considerations
No replacement part numbers are documented in the provided datasheet. The manufacturer lists the product as End of Life with no available substitutes.
