CTLDM7120-M621H TR

Description：MOSFET N-CH 20V 1A TLM621H
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR)

SKU:a40ba9d12848 Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 20V 1A TLM621H
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：100mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：2.4 nC @ 4.5 V
Vgs (Max)：8V
Input Capacitance (Ciss) (Max) @ Vds：220 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta)
Operating Temperature：-65°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TLM621H
Package / Case：6-XFDFN Exposed Pad

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CTLDM7120-M621H TR

Overview

The CTLDM7120-M621H TR is a surface-mount N-channel enhancement-mode silicon MOSFET manufactured by Central Semiconductor Corp. It features a TLM621H package with an exposed thermal pad internally connected to the drain pins. The device supports a drain-source voltage of 20 V and a continuous drain current of 1.0 A at 25°C. Key electrical parameters include a maximum gate-source voltage of 8.0 V, a threshold voltage range of 0.5 V to 1.2 V, and a total gate charge of 2.4 nC. The on-resistance varies from 0.075 Ω to 0.25 Ω depending on the gate drive voltage and drain current conditions.

Feature Summary

Logic level compatibility for low-voltage control applications
ESD protection rated up to 2 kV
Low on-resistance optimized for high-speed pulsed amplifier and driver circuits

Applications

Load and power switching circuits
Power supply converter topologies
Battery-powered portable equipment

Procurement Notes

Verify End-of-Life status before design finalization. Confirm availability through authorized distributors or stock-only channels as production has ceased. Request updated datasheets and replacement part recommendations directly from Central Semiconductor engineering support to ensure component continuity in existing designs.

Selection Notes

Select this component for applications requiring a compact N-channel MOSFET with logic-level gate drive capability. Ensure the operating junction temperature remains within the -65°C to +150°C range. Verify that the PCB layout accommodates the TLM621H package dimensions and utilizes thermal vias to connect the exposed pad to the ground plane for optimal heat dissipation.

Part Context

This device belongs to the Central Semiconductor enhancement-mode N-channel MOSFET family utilizing DMOS process technology. It is designed specifically for high-speed switching applications where low threshold voltage and fast response times are critical requirements for efficient power management in small form factor electronics.