CWDM305ND TR13 PBFREE

$0.93

Description：MOSFET 2N-CH 30V 5.8A 8SOIC
Series：-

SKU:488409338bd5 Category: FET, MOSFET Arrays Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 5.8A 8SOIC
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：5.8A
Rds On (Max) @ Id, Vgs：30mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds：560pF @ 10V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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CWDM305ND TR13 PBFREE

Overview

The CWDM305ND TR13 PBFREE is a surface-mount silicon dual N-channel enhancement-mode MOSFET designed for high-speed pulsed amplifier and driver applications. It features low on-resistance, low gate charge, and low threshold voltage. Key electrical parameters include a drain-source voltage of 30 V, continuous drain current of 5.8 A, and maximum pulsed drain current of 23.2 A. The device operates within a junction temperature range of -55°C to +150°C and offers a typical rDS(ON) of 0.030 Ω at VGS=10V and ID=2.9A.

Feature Summary

Dual N-channel configuration in a single package
Optimized for high-speed pulsed amplifier and driver applications
Low gate charge and low threshold voltage for efficient switching

Applications

Load and power switches
DC-DC converter circuits
Power management systems

Procurement Notes

Verify the component against official datasheets to confirm pinout compatibility and thermal characteristics. Ensure that the SOIC-8 package dimensions align with the target PCB layout. Confirm RoHS compliance status through manufacturer documentation before finalizing procurement specifications.

Selection Notes

Select this component when a compact dual N-channel solution is required for high-current switching tasks. Evaluate the thermal resistance and power dissipation limits relative to the expected operating environment. Consider the low gate charge characteristics for driving efficiency in high-frequency applications.

Part Context

This part belongs to Central Semiconductor's surface-mount MOSFET lineup, specifically engineered for energy-efficient designs. The CWDM305ND integrates two independent N-channel MOSFETs into an SOIC-8 package, providing a space-saving alternative to discrete single-channel devices for complex circuit architectures.

Replacement Considerations

Check for direct substitutes with identical pinouts and comparable electrical ratings. Verify that any replacement maintains the same SOIC-8 package profile and thermal performance characteristics to ensure seamless integration without redesigning the host circuit board.