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Product Detailed Parameters
- Description：MOSFET P-CH 30V 5.3A 8SOIC
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：72mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7 nC @ 5 V
- Vgs (Max)：16V
- Input Capacitance (Ciss) (Max) @ Vds：590 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The CWDM305P is a surface-mount silicon P-channel enhancement-mode MOSFET manufactured via the P-channel DMOS process. It features a maximum drain-source voltage of 30 V and a continuous drain current of 5.3 A. The device offers a low on-resistance of 83 mΩ maximum at VGS=5.0V, with a gate threshold voltage ranging from 1.0 to 3.0 V. Total gate charge is typically 4.7 nC, and thermal resistance (junction-to-ambient) is 62.5 °C/W. It operates within a junction temperature range of -55 to +150 °C.
Feature Summary
- High current capability for pulsed amplifier and driver applications
- Low on-resistance optimized for high-speed switching efficiency
- Low threshold voltage enabling direct logic interface compatibility
Applications
- Load and power switches
- Power supply converter circuits
- Battery-powered portable equipment
Procurement Notes
Verify that the ordering suffix matches the required plating finish. Use 'PBFREE' for lead-free devices or 'TIN/LEAD' for tin/lead plated versions. Confirm package type is SOIC-8 and check RoHS compliance status in the official datasheet before finalizing procurement specifications.
Selection Notes
Select this component when designing circuits requiring a P-channel MOSFET with a 30 V rating and up to 5.3 A continuous current. Ensure the application supports the specified 2.0 W power dissipation or provides adequate PCB copper area to manage the 62.5 °C/W thermal resistance. Verify that the gate drive voltage meets the 5.0 V requirement for optimal on-resistance performance.
Part Context
This part belongs to the Central Semiconductor CWDM series of surface-mount P-channel MOSFETs. It utilizes the SOIC-8 mechanical outline and is designed specifically for high-speed pulsed applications. The marking code C503P identifies the device on the package body.
Replacement Considerations
Cross-reference with other Central Semiconductor parts in the CMxxDM series for similar electrical characteristics. Verify pinout compatibility and thermal resistance values when substituting with components from other manufacturers.
