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The CXDM4060N TR PBFREE is a surface-mount silicon N-channel enhancement-mode MOSFET designed for high-speed pulsed amplifier and driver applications. It features a maximum drain-source voltage of 40 V, a continuous drain current of 6.0 A, and a power dissipation of 1.2 W. The device operates within a junction temperature range of -55 to +150 °C. Electrical characteristics include a typical on-resistance of 20 mΩ at VGS=10V and a total gate charge of 12 nC.
Verify the End-of-Life status before procurement. All SOT-89 package devices are discontinued. Orders may be accepted only from available inventory or through Last Time Buy options. Confirm final shipment dates with Central Semiconductor Customer Service, as minimum order quantities may apply and standard production has ceased.
Select this component for designs requiring an N-channel MOSFET in a SOT-89 package. Ensure the application supports the 40 V drain-source voltage limit and 6.0 A continuous current rating. Verify that the logic-level compatibility meets the driving circuit requirements. Note that the package is discontinued; evaluate alternative packages if long-term availability is required.
This part belongs to the CXDM series of surface-mount silicon MOSFETs manufactured by Central Semiconductor Corp. It utilizes the SOT-89 case configuration. The manufacturer classifies all devices in the SOT-89 package as End of Life (EOL) due to declining customer demand and portfolio management strategies.
No suggested replacement part numbers are provided in the official discontinuation notice. Contact Central Semiconductor Customer Service for assistance in locating an alternate source.