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The CXDM4060P TR PBFREE is a surface-mount silicon P-Channel enhancement-mode MOSFET designed for high-speed pulsed amplifier and driver applications. It features a SOT-89 package with a Drain-Source Voltage (VDS) of 40 V, Gate-Source Voltage (VGS) of 20 V, and Continuous Drain Current (ID) of 6.0 A. The device offers a typical rDS(ON) of 48 mΩ at VGS=10V and 80 mΩ at VGS=4.5V. Total gate charge (Qg) is 16 nC. Power dissipation is rated at 1.2 W with an operating junction temperature range from -55°C to +150°C.
Verify the End of Life status before procurement. Central Semiconductor has discontinued all devices in the SOT-89 package. Orders may only be accepted based on available inventory or Last Time Buy availability. Confirm final shipment dates and minimum order quantities directly with customer service representatives.
Select this component for designs requiring a P-Channel MOSFET with low on-resistance and logic-level gate drive compatibility. Ensure the design accommodates the discontinuation status by validating existing stock levels or initiating alternative sourcing strategies immediately.
This part belongs to the CMxxDM series of high-current silicon MOSFETs manufactured by Central Semiconductor Corp. It utilizes the SOT-89 case outline, which consists of three leads: Gate, Drain, and Source. The marking on the device indicates the full part number.
No replacement products are currently available for the CXDM4060P. Contact Central Semiconductor Customer Service for assistance in locating an alternate source.