DD1000S33HE3BPSA1

$944.78

Description：DIODE MODULE GP 3300V AGIHVB1303
Series：-

SKU:ae4c0f69e5c9 Category: Diode Arrays Brand: Infineon Technologies

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Product introduction

DD1000S33HE3BPSA1 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE MODULE GP 3300V AGIHVB1303. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for DD1000S33HE3BPSA1

Description：DIODE MODULE GP 3300V AGIHVB1303
Series：-
Mfr：Infineon Technologies
Package：Bulk,Tray
Diode Configuration：2 Independent
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：3300 V
Current - Average Rectified (Io) (per Diode)：-
Voltage - Forward (Vf) (Max) @ If：3.85 V @ 1000 A
Speed：Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：-
Operating Temperature - Junction：-40°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：AG-IHVB130-3
Grade：-
Qualification：-

Diode Arrays datasheet and documents for DD1000S33HE3BPSA1

DD1000S33HE3BPSA1

Diode Arrays Overview

The DD1000S33HE3BPSA1 is an IHM-B module diode with a repetitive peak reverse voltage of 3300 V and a continuous DC forward current of 1000 A. It features an AlSiC base plate for enhanced thermal cycling capability and an isolated base plate design. The module operates within a junction temperature range of -40°C to +150°C, supports a maximum power dissipation of 1600 kW, and includes high DC stability alongside low switching losses.

Diode Arrays Feature Summary

AlSiC base plate construction for increased thermal cycling capability
Isolated base plate design ensuring electrical safety
Package rated with a comparative tracking index exceeding 600

Diode Arrays Applications

Medium voltage converters
Motor drives
Traction drives
UPS systems
Wind turbines

Diode Arrays Procurement Notes

Verify the exact ordering suffix against official Infineon documentation to confirm specific material or packaging variations. Confirm RoHS compliance status and REACH SVHC declarations directly from the manufacturer's datasheet before procurement. Ensure that the module is handled according to electrostatic discharge precautions during storage and installation.

Diode Arrays Selection Notes

Select this component for high-power applications requiring robust thermal management and high voltage isolation. The AlSiC substrate provides superior mechanical reliability under thermal stress compared to standard materials. Verify compatibility with the intended cooling system and ensure the mounting torque specifications are strictly adhered to during assembly.

Diode Arrays Part Context

This part belongs to the IHM-B module series designed for demanding industrial environments. It utilizes silicon technology optimized for high-current rectification in medium-voltage systems. The module integrates advanced packaging techniques to minimize stray inductance and improve overall system efficiency in power conversion circuits.

Diode Arrays Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Dynamic data validity may depend on pairing with specific complementary modules such as the FZ1000R33HE3. Do not assume interchangeability without verifying electrical parameters and mechanical dimensions.