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Product Detailed Parameters
- Description：IGBT MODULE 1200V 1200A
- Series：IHM-B
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：2 Independent
- Vce(on) (Max) @ Vge, Ic：2.35V @ 15V, 1200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：1200 A
- Power - Max：1200000 W
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：-
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Overview
The DD1200S12H4 is a high-power IGBT module featuring an integrated inverter diode within the IHM-B housing. It supports a maximum repetitive peak reverse voltage of 1200 V and a continuous DC forward current of 1200 A, with a repetitive peak forward current rating of 2400 A. The component operates across an extended junction temperature range from -40 °C to 150 °C. Key electrical parameters include a typical forward voltage of 1.75 V at 25 °C and a thermal resistance from junction to case of 40.0 K/kW per diode. The module provides 4 kV AC insulation for one minute and utilizes a copper baseplate.
Feature Summary
- Extended operating junction temperature capability up to 150 °C
- High power density design utilizing the IHM-B housing configuration
- Robust isolation characteristics including 4 kV AC insulation and CTI greater than 400
Applications
- High power converters
- Motor drives
- Multi-level inverters
- Wind turbines
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm exact specifications. Confirm that the requested part matches the required technical data sheet revision. Ensure compatibility with valid application notes regarding mounting torque and thermal interface material selection before procurement.
Selection Notes
Evaluate the module's stray inductance and thermal resistance values against the target circuit requirements. Consider the dynamic data validity conditions specified in the datasheet when designing the gate drive circuit. Verify that the chosen heatsink solution can accommodate the specified mechanical dimensions and mounting torque constraints.
Part Context
This component belongs to the Infineon IHM-B module family designed for industrial applications. It integrates advanced semiconductor technology optimized for high-current handling and thermal management. The series is engineered to meet the rigorous demands of modern power electronics systems requiring reliable performance under heavy load conditions.
Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout, thermal resistance, and voltage ratings. Validate mechanical compatibility with existing PCB layouts and cooling structures.
