DD200KB220

$64.52

Description：DIODE MODULE GEN PURP 2200V 200A
Series：-

SKU:ed9ee2d6bd3c Category: Diode Arrays Brand: SanRex Corporation

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Product introduction

Product Detailed Parameters

Description：DIODE MODULE GEN PURP 2200V 200A
Series：-
Mfr：SanRex Corporation
Package：Tray
Diode Configuration：1 Pair Series Connection
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：2200 V
Current - Average Rectified (Io) (per Diode)：200A
Voltage - Forward (Vf) (Max) @ If：1.3 V @ 620 A
Speed：Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：50 mA @ 2200 V
Operating Temperature - Junction：-40°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

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DD200KB220

Overview

The SanRex DD200KB220 is a silicon diode module featuring an isolated mounting base and dual internal chip configuration. It supports a repetitive peak reverse voltage of 2200 V and a non-repetitive peak reverse voltage of 2300 V. The average forward current rating is 200 A, with an RMS forward current capacity of 310 A under specified thermal conditions. Surge forward current capability reaches 5000 A for half-cycle pulses at 50 Hz. The junction-to-case thermal resistance is 0.17 °C/W. Operating junction temperature ranges from -40 °C to +150 °C, while storage temperature spans -40 °C to +125 °C. Typical mass is 240 g.

Feature Summary

Dual diode chips integrated within a single package for bridge connections
Electrically isolated mounting base simplifies heatsink construction
High surge current capability for robust circuit protection
Glass passivated chips ensure high reliability

Applications

VVVF rectifier circuits
CVCF rectifier circuits
DC motor drives

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributor before finalizing procurement. Confirm that the isolation breakdown voltage meets the system requirements of 2500 V AC for one minute. Ensure mounting torque specifications are strictly adhered to during installation to maintain electrical integrity and thermal performance.

Selection Notes

Select this component when applications require high voltage ratings up to 2200 V combined with significant current handling capabilities. The isolated base design is advantageous for systems requiring galvanic isolation between the heatsink and the circuit. Consider the thermal resistance characteristics when designing the cooling infrastructure to ensure the junction temperature remains within the specified operational limits.

Part Context

This device belongs to the SanRex DD series of discrete semiconductor modules. These modules are engineered for power electronics applications demanding reliable rectification in industrial environments. The series utilizes silicon technology and offers various voltage and current configurations to suit different power conversion needs.