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The DD450S45T3E4B5BPSA1 is a high-power diode module from the XHP™3 series, rated for 4500 V repetitive peak reverse voltage and 450 A continuous DC forward current. It features an emitter-controlled diode with a maximum power dissipation of 1500 kW at 150 °C junction temperature. The module utilizes an AlSiC base plate to enhance thermal cycling capability and provides insulation isolation test voltages up to 10.4 kV RMS. Key electrical parameters include a forward voltage of 2.6 V typical at 25 °C and a peak reverse recovery current of 920 A.
Verify component authenticity by cross-referencing the Data Matrix barcode on the module label against official Infineon records. Confirm that the specific ordering suffix matches the required technical specifications. Ensure compliance with industrial qualification standards such as IEC 60747 and IEC 60068 before integration into critical systems.
Select this module for applications requiring high voltage blocking capabilities and significant current handling in medium-voltage environments. Consider the thermal resistance values and mounting torque requirements when designing the heatsink interface. Verify that the system operating temperature remains within the specified -40 °C to 150 °C range for optimal performance.
This component belongs to the XHP™3 product family, which represents advanced high-power semiconductor modules. The series is engineered for demanding industrial applications where reliability under high stress conditions is paramount. It complements other devices in the lineup, such as the FF450R45T3E4_B5 IGBT module, for complete converter solutions.
Consult official documentation for direct substitutes. Cross-compatibility depends on matching voltage ratings, current capacities, and mechanical dimensions. Verify pinout configurations and thermal characteristics before substituting.