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The DD800S17K3B2NOSA1 is a high-power IGBT module manufactured by Infineon Technologies, belonging to the Diodes IGBT EC4 Module series. It features a single configuration with a collector-emitter maximum voltage of 1.7 kV and a continuous collector current of 800 A at 25°C. The component utilizes silicon technology and is housed in a tray package designed for screw mount installation. Operating temperatures range from -40°C to +125°C. The module weighs approximately 374.488 g and carries the trademark of Infineon Technologies.
Verify the exact part number suffix against official manufacturer documentation before procurement. Ordering suffixes may indicate specific manufacturing variants or packaging differences that do not alter electrical function but affect compatibility. Confirm RoHS compliance status through the latest datasheet. Ensure the supplier provides traceable documentation matching the requested specifications.
Select this module based on its 1.7 kV blocking voltage and 800 A current rating requirements. Evaluate thermal resistance characteristics against the system's cooling capabilities. Verify that the IHM130 or compatible package dimensions fit the mechanical design constraints. Consider the single configuration topology when designing the circuit layout.
This component is part of Infineon's Diodes IGBT EC4 Module family, designed for high-power industrial applications. It represents a silicon-based solution offering a balance of voltage handling and current capacity. The module is distinct from lower-current or different voltage class modules within the broader product portfolio.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon cross-reference guides for potential alternatives.