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Product Detailed Parameters
- Description：DD800S17 - IGBT MODULE
- Series：*
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Configuration：-
- Vce(on) (Max) @ Vge, Ic：-
- Input：-
- NTC Thermistor：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Power - Max：-
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：-
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Overview
The DD800S17K6CB2NOSA1 is a high-power IGBT module from Infineon Technologies, belonging to the Diodes IGBT EC4 Module series. It features an insulated design suitable for demanding industrial applications. The component integrates fast recovery diodes with IGBTs in a single package. Key electrical ratings include a collector-emitter voltage of 1700V and a continuous collector current of 800A at 25°C. The module utilizes pressure contact technology for reliable thermal and electrical connections. It is housed in a robust mechanical package designed for screw mounting.
Feature Summary
- Integrates IGBT and fast recovery diode technologies within a single insulated module structure
- Utilizes pressure contact technology to ensure high reliability and efficient thermal management
- Designed for high-current applications with specific voltage ratings for industrial power conversion
Applications
- Industrial motor drives and traction systems
- High-power DC-AC inverters for renewable energy
- Medium-voltage power supply units
Procurement Notes
Verify the complete ordering code including suffixes such as B2 or HOSA1 against official Infineon documentation to ensure correct variant selection. Confirm that the required datasheet version matches the specific production batch requirements. Check for any specific handling instructions related to the pressure contact interface during installation. Ensure compatibility with existing cooling systems and gate drive circuits before procurement.
Selection Notes
Select this module when high current capacity and robust insulation are required for medium-voltage applications. Consider the thermal impedance characteristics and switching energy losses provided in the official datasheet curves. Evaluate the mechanical dimensions and mounting hole patterns against the target PCB or baseplate design. Verify that the gate threshold voltages align with the available driver circuitry specifications.
Part Context
This component is part of Infineon's Diodes IGBT EC4 Module family, which focuses on high-performance power semiconductor solutions. The series is engineered for applications requiring high efficiency and reliability under harsh operating conditions. It represents a mature technology platform used extensively in global industrial infrastructure. The module design emphasizes compactness and ease of integration into larger power electronic systems.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires consulting official Infineon replacement guides or technical support channels directly.
