DDB2U30N08VRBOMA1

DDB2U30N08VRBOMA1

  • Description:IGBT MOD 600V 25A 83.5W
  • Series:-

SKU:c51130621626 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT MOD 600V 25A 83.5W
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • IGBT Type:-
  • Configuration:3 Independent
  • Vce(on) (Max) @ Vge, Ic:2.55V @ 15V, 20A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 125°C
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):25 A
  • Power - Max:83.5 W
  • Current - Collector Cutoff (Max):1 mA
  • Input Capacitance (Cies) @ Vce:880 pF @ 25 V

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DDB2U30N08VRBOMA1

Overview

The DDB2U30N08VR is a dual IGBT module with an integrated anti-parallel diode, manufactured by Infineon Technologies. It features a standard input configuration and operates within a junction temperature range of -40°C to 150°C. The module provides a maximum collector-emitter voltage (Vces) of 600 V and a continuous collector current (Ic) of 30 A at 25°C. Key electrical parameters include a saturation voltage (Vce(sat)) of 1.7 V at 30 A and a forward voltage (Vf) of 1.2 V at 30 A. Input capacitance (Cies) is 14 nF at 25 V. The component utilizes a base-mounted module package and includes an NTC thermistor for thermal monitoring.

Feature Summary

  • Dual IGBT configuration with integrated freewheeling diodes
  • Integrated NTC thermistor for precise thermal management
  • Standard gate drive compatibility

Applications

  • Motor drives and servo systems
  • Industrial power supplies
  • Inverter circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact packaging and marking details. Confirm availability status as product lifecycles may change. Ensure compliance with RoHS directives and verify that the preliminary data status does not impact final qualification requirements for your specific application.

Selection Notes

Evaluate the thermal resistance characteristics and ensure adequate heatsinking to maintain junction temperatures within the specified limits. Verify that the gate drive circuitry matches the required switching speeds and voltage levels. Consider the mechanical mounting constraints associated with the base-mounted module format.

Part Context

This component belongs to the DDB2U series of IGBT modules from Infineon Technologies. These modules are designed for high-power applications requiring robust switching capabilities and efficient thermal dissipation. The series typically supports various voltage and current ratings to accommodate different industrial power electronics designs.

Replacement Considerations

Consult official replacement guides or contact manufacturer support for verified substitute part numbers. Do not assume cross-compatibility based on similar naming conventions without verifying electrical and mechanical specifications.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature (Tvj max) is 150°C.

Does this module include thermal protection components?

Yes, the module integrates an NTC thermistor for temperature monitoring.

What is the typical saturation voltage at rated current?

The saturation voltage (Vce(sat)) is typically 1.7 V at a collector current of 30 A.

DDB2U30N08VRBOMA1DDB2U30N08VRBOMA1

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