DDB2U50N08W1RB23BOMA2

Description：IGBT MODULE
Series：-

SKU:6c727977abad Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MODULE
Series：-
Mfr：Infineon Technologies
Package：Tray
IGBT Type：-
Configuration：2 Independent
Vce(on) (Max) @ Vge, Ic：-
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Power - Max：-
Current - Collector Cutoff (Max)：-
Input Capacitance (Cies) @ Vce：14 nF @ 25 V

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DDB2U50N08W1RB23BOMA2

Overview

The DDB2U50N08W1RB23BOMA2 is a CoolMOS-based EasyBRIDGE module integrating two independent N-channel MOSFETs and a brake-chopper diode. It features PressFIT technology for board mounting. The MOSFETs provide a drain-source breakdown voltage of 600 V, with a nominal DC drain current of 50 A at TH = 45°C and a pulsed current of 100 A. The on-resistance (RDS(on)) is typically 33 mΩ at 25°C. The integrated rectifier diode supports an 800 V repetitive peak reverse voltage and a 50 A RMS forward current. Operating junction temperatures range from -40°C to 150°C.

Feature Summary

Integrates CoolMOS power transistors with low switching losses
Utilizes PressFIT contact technology for robust mechanical connection
Features Al2O3 substrate for efficient thermal management
Includes integrated mounting clamps for secure installation

Applications

Auxiliary inverters
Inductive heating and welding systems
Air conditioning units
Motor drives

Procurement Notes

Verify the specific ordering suffix B23 against official Infineon documentation to confirm exact material content and compliance status. Confirm that the component remains suitable for the intended application despite its discontinued status. Ensure that the PressFIT termination method aligns with the target PCB design requirements before procurement.

Selection Notes

Select this module when a compact solution combining high-voltage MOSFETs and a brake-chopper diode is required. The 600 V rating suits medium-voltage applications. Verify that the 50 A continuous current capability meets load demands. Consider the 20 nH stray inductance for high-speed switching designs. Evaluate the thermal resistance values against the available heatsinking capacity.

Part Context

This component belongs to the EasyBRIDGE series, designed for high-power density applications. It combines CoolMOS technology with integrated protection features. The module format allows for direct press-fit mounting, reducing assembly complexity compared to traditional screw-terminal modules. It represents a specialized solution for industrial power conversion.