DDB6U104N16RRBPSA1

Overview

The DDB6U104N16RRBPSA1 is a diode module with chopper-IGBT in the EconoBRIDGE™ package. It integrates a three-phase rectifier diode, a brake-chopper IGBT, and a fast recovery diode. Maximum rated values include a repetitive peak reverse voltage of 1600 V for the rectifier and 1200 V for the IGBT collector-emitter. The RMS forward current per chip is 60 A, with an output current of 105 A at TC = 100°C. The IGBT supports a DC collector current of 50 A at TC = 80°C and a total power dissipation of 350 W. Thermal resistance from junction to case is 1.08 °C/W for the rectifier and 0.38 °C/W for the transistor.

Feature Summary

• Integrates a three-phase rectifier bridge with a dedicated brake-chopper IGBT circuit.
• Includes an NTC thermistor connected to the baseplate for internal temperature monitoring.
• Features screw-mount terminals and a copper baseplate for optimized heat spreading.
• Provides high insulation test voltage of 2.5 kV RMS between terminals and baseplate.

Applications

• Industrial motor drives requiring regenerative braking capabilities.
• Pump and fan control systems utilizing DC link choppers.
• Medium-power AC/DC conversion units with integrated braking.

Procurement Notes

Verify the specific ordering suffix BPSA1 against official Infineon documentation to confirm exact configuration details. Ensure compatibility with standard mounting torque specifications of 4 Nm for mechanical fixation. Confirm thermal interface material requirements align with the module's copper baseplate design for optimal heat transfer performance.

Selection Notes

Select this component when a combined rectifier and active braking solution is required in a compact form factor. Evaluate the 1600 V blocking capability against DC link voltage peaks. Consider the 50 A IGBT rating relative to the load current and duty cycle to ensure operation within the 350 W total power dissipation limit at the intended case temperature.

Part Context

This module belongs to the EconoBRIDGE™ family, designed for low- and medium-power applications. It combines silicon diodes and IGBTs in a single housing to reduce parasitic inductance and simplify layout. The series offers optimized thermal resistance and reliable mounting for industrial drive environments.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout and thermal characteristics before considering any alternative components from other manufacturers or different Infineon series.