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The DF1000R17IE4DB2BOSA1 is a single IGBT module from Infineon Technologies, part of the TRENCHSTOP PrimePACK 3 series. It features a 1.7 kV collector-emitter voltage rating and a continuous collector current of 1 kA at 25°C. The saturation voltage is specified at 2 V (typical) or 2.45 V (maximum), with a power dissipation capacity of 6.25 kW. Operating within a temperature range of -40°C to +150°C, it utilizes silicon technology and is housed in a screw-mount PrimePACK 3 package.
Verify component authenticity through authorized Infineon distributors. Confirm RoHS compliance status via official documentation. Check for end-of-life notifications as discontinuance information may affect long-term availability. Ensure ordering suffixes match specific manufacturing batches.
Select this module for applications requiring high current handling in a compact form factor. Verify thermal management capabilities align with the 6.25 kW dissipation rating. Ensure gate drive voltages are compatible with standard IGBT requirements. Consider mechanical mounting constraints associated with the PrimePACK 3 chassis mount style.
This component belongs to Infineon's PrimePACK 3 family, designed for robust industrial power conversion. It complements other high-current modules like FF1000R17IE4B60BPSA1 but offers a single configuration rather than dual or half-bridge topologies. The E4 generation indicates advanced trench gate technology.
DF1000R17IE4D_B2 is listed as an alias or predecessor part number. Direct substitution requires verification of pinout compatibility and exact electrical parameter tolerances against the DB2BOSA1 variant.