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The DF100R07W1H5FPB53BPSA1 is a SiC IGBT booster module from Infineon Technologies, belonging to the Trenchstop IGBT5 H5 series. It features a dual configuration with a maximum collector-emitter voltage of 650 V and a continuous collector current of 40 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.35 V and a gate-emitter leakage current of 100 nA. Designed for press-fit installation, it operates within a temperature range of -40°C to +150°C. The module utilizes CoolSiC technology and is housed in an EasyPACK package.
Verify the specific ordering suffix against official Infineon documentation to ensure correct variant selection. Confirm that the requested part number matches the exact technical specifications required for the application, as suffixes may indicate differences in packaging or testing criteria.
Select this component for applications requiring high-frequency switching and low conduction losses in booster topologies. Ensure the thermal management design accommodates the specified operating temperature range and junction temperature limits defined in the official datasheet.
This module is part of Infineon's CoolSiC portfolio, combining silicon carbide MOSFETs with IGBTs. It belongs to the EasyPACK family, designed for compact power modules. The H5 series represents advanced trench gate technology optimized for efficiency and reliability in demanding power electronics environments.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon cross-reference tools for compatible alternatives.