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The DF100R07W1H5FPB54BPSA2 is a dual IGBT module from Infineon's TRENCHSTOP™ 5 H5 series, featuring CoolSiC™ diodes. It provides a collector-emitter voltage of 650 V and an implemented collector current of 50 A. The continuous DC collector current reaches 40 A at 25°C and 25 A at 100°C, with a repetitive peak current of 100 A. The module incorporates pre-applied thermal interface material and utilizes PressFIT mounting technology.
Verify the specific ordering suffix B54 to confirm the inclusion of pre-applied thermal interface material and PressFIT terminals. Ensure compliance with storage guidelines for modules containing TIM as outlined in application note AN2012-07. Confirm that the baseplate operation temperature does not exceed 125°C during installation.
Select this module for designs requiring high blocking voltage capability up to 650 V combined with low forward voltage drop. Consider the 15 nH module stray inductance for high-frequency switching requirements. Verify that the gate drive voltage range supports the specified ±15 V operation for optimal switching performance.
This component belongs to the EasyPACK™ module family, designed for industrial power conversion. It combines silicon IGBT technology with silicon carbide diodes to enhance efficiency. The module is part of the TRENCHSTOP™ 5 generation, focusing on reducing switching energy losses while maintaining robust short-circuit withstand capability.
Direct replacements must match the 650 V rating, 50 A nominal current, and EasyPACK™ mechanical footprint. Verify that substitute components support PressFIT mounting and include similar thermal characteristics. Cross-reference with other TRENCHSTOP™ 5 H5 variants if pinout compatibility is required.