DF11MR12W1M1B11BOMA1

Description：MOSFET 2N-CH 1200V AG-EASY1BM-2
Series：-

SKU:c36b8e390e62 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 1200V AG-EASY1BM-2
Series：-
Mfr：Infineon Technologies
Package：Tray
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：50A
Rds On (Max) @ Id, Vgs：23mOhm @ 50A, 15V
Vgs(th) (Max) @ Id：5.5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs：125nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds：3950pF @ 800V
Power - Max：-
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：AG-EASY1BM-2
Grade：-
Qualification：-

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DF11MR12W1M1B11BOMA1

Overview

The DF11MR12W1M1B11BOMA1 is a CoolSiC Trench MOSFET module in the EasyPACK 1B package. It features dual N-Channel MOSFETs with a 1200 V drain-source voltage and a nominal continuous drain current of 50 A at 30°C heatsink temperature, peaking at 100 A pulsed. The on-resistance is 29.5 mΩ at 25°C. Integrated components include a boost diode, bypass diodes, inverse-polarity protection diodes, and an NTC thermistor (5 kΩ). Operating junction temperatures range from -40°C to +150°C.

Feature Summary

Utilizes low-inductive PressFIT contact technology for robust mounting.
Integrates an NTC temperature sensor for thermal monitoring.
Features high current density and low switching losses.
Includes integrated mounting clamps for secure installation.

Applications

Solar applications
Electric vehicle chargers
Uninterruptible power supplies

Procurement Notes

Verify component authenticity through authorized Infineon distributors or official channels. Confirm datasheet version alignment with design requirements. Ensure compliance with RoHS directives and application-specific safety standards. Validate gate voltage limits against operational guidelines to maintain long-term device reliability.

Selection Notes

Evaluate thermal resistance characteristics relative to system cooling capabilities. Assess gate drive requirements against specified threshold voltages and internal gate resistance. Consider stray inductance limitations within the circuit layout. Verify that operating currents remain within safe reverse-bias operating area boundaries under expected load conditions.

Part Context

This component belongs to the CoolSiC family utilizing silicon carbide technology. It is part of the EasyPACK series designed for compact power conversion systems. The module integrates multiple semiconductor functions into a single press-fit housing, optimizing space and reducing parasitic effects in high-frequency switching environments.