DF23MR12W1M1B11BPSA1

Overview

The DF23MR12W1M1B11BPSA1 is a dual N-channel SiC MOSFET module from the Discrete IGBT7 series, manufactured by Infineon Technologies. It utilizes CoolSiC technology and features an AG-EASY1BM-2 package with screw mount installation. Key electrical parameters include a drain-source breakdown voltage of 1.2 kV, a continuous drain current of 25 A, and a maximum on-resistance of 66 mOhms. The gate-source voltage range is +5.55 V, with a threshold voltage of 3.45 V. Operating temperatures span from -40°C to +150°C. Switching characteristics include a typical turn-on delay of 11.3 ns, turn-off delay of 38.5 ns, rise time of 7.2 ns, and fall time of 12.8 ns.

Feature Summary

• Utilizes Silicon Carbide (CoolSiC) technology for high-performance power switching.

Applications

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm package integrity and pin alignment against the AG-EASY1BM-2 specification before integration. Ensure thermal management systems align with the specified operating temperature limits. Cross-reference datasheet revisions to confirm parameter consistency during procurement.

Selection Notes

Select this module for applications requiring robust high-voltage switching with moderate current capabilities. The dual configuration supports half-bridge topologies. Verify that the 66 mOhm on-resistance meets efficiency targets. Ensure drive circuits accommodate the specific gate voltage requirements and switching speeds defined in the datasheet.

Part Context

This component belongs to Infineon's CoolSiC portfolio, designed for efficient power conversion. The AG-EASY1BM-2 packaging facilitates secure mechanical mounting. As part of the Discrete IGBT7 series, it represents specialized silicon carbide solutions for demanding industrial environments.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

FAQ