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The DF300R12KE3HOSA1 is a dual IGBT module with an integrated free-wheeling diode, manufactured by Infineon Technologies. It features a collector-emitter voltage rating of 1200 V and a nominal continuous collector current of 300 A, with a maximum repetitive peak current of 600 A. The total power dissipation is rated at 1470 W. Key electrical parameters include a typical collector-emitter saturation voltage of 1.7 V at 300 A and 25°C, and a typical forward voltage of 2.0 V for the diode. The module operates within a junction temperature range of -40°C to +125°C.
Verify the specific suffix HOSA1 against official documentation to confirm compliance with RoHS directives and REACH regulations. Ensure that the ordering quantity aligns with manufacturer packaging standards. Cross-reference the datasheet revision date to validate the accuracy of the provided electrical specifications before finalizing procurement orders.
Select this component for designs requiring a 1200 V blocking voltage and up to 300 A continuous current handling. Evaluate the thermal resistance values from the case to heatsink interface to ensure adequate cooling solutions are implemented. Confirm that the gate drive circuitry supports the specified ±15 V operating range and accounts for the required gate charge characteristics.
This module belongs to Infineon's IGBT module portfolio, specifically utilizing TrenchStop technology. It is part of a series designed for industrial applications where high reliability and efficient power conversion are critical. The dual configuration allows for compact circuit layouts in inverter legs.
Consult official Infineon documentation for verified direct replacements or pin-compatible alternatives. Do not substitute based on generic parameter matching alone; verify mechanical dimensions and thermal characteristics.
The maximum repetitive peak collector current is 600 A under specified conditions.
The insulation test voltage is 6.5 kV RMS at 50 Hz for 1 minute.
The typical turn-on energy loss is 14 mJ at 25°C junction temperature with a 2.4 Ω gate resistor.