DF300R12KE3HOSA1

DF300R12KE3HOSA1

$103.58
  • Description:MEDIUM POWER 62MM
  • Series:*

SKU:f7fc26d697b4 Category: Brand:

  
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Product Detailed Parameters

  • Description:MEDIUM POWER 62MM
  • Series:*
  • Mfr:Infineon Technologies
  • Package:Bulk
  • IGBT Type:-
  • Configuration:-
  • Vce(on) (Max) @ Vge, Ic:-
  • Input:-
  • NTC Thermistor:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Current - Collector (Ic) (Max):-
  • Power - Max:-
  • Current - Collector Cutoff (Max):-
  • Input Capacitance (Cies) @ Vce:-

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DF300R12KE3HOSA1

Overview

The DF300R12KE3HOSA1 is a dual IGBT module with an integrated free-wheeling diode, manufactured by Infineon Technologies. It features a collector-emitter voltage rating of 1200 V and a nominal continuous collector current of 300 A, with a maximum repetitive peak current of 600 A. The total power dissipation is rated at 1470 W. Key electrical parameters include a typical collector-emitter saturation voltage of 1.7 V at 300 A and 25°C, and a typical forward voltage of 2.0 V for the diode. The module operates within a junction temperature range of -40°C to +125°C.

Feature Summary

  • Dual configuration integrating an IGBT transistor and a complementary free-wheeling diode in a single package.
  • Designed for high-power switching applications requiring robust short-circuit capability and reliable thermal management.
  • Utilizes TrenchStop technology to optimize switching losses and conduction characteristics.

Applications

  • Industrial motor drives and inverters
  • Uninterruptible Power Supplies (UPS)
  • Induction heating systems

Procurement Notes

Verify the specific suffix HOSA1 against official documentation to confirm compliance with RoHS directives and REACH regulations. Ensure that the ordering quantity aligns with manufacturer packaging standards. Cross-reference the datasheet revision date to validate the accuracy of the provided electrical specifications before finalizing procurement orders.

Selection Notes

Select this component for designs requiring a 1200 V blocking voltage and up to 300 A continuous current handling. Evaluate the thermal resistance values from the case to heatsink interface to ensure adequate cooling solutions are implemented. Confirm that the gate drive circuitry supports the specified ±15 V operating range and accounts for the required gate charge characteristics.

Part Context

This module belongs to Infineon's IGBT module portfolio, specifically utilizing TrenchStop technology. It is part of a series designed for industrial applications where high reliability and efficient power conversion are critical. The dual configuration allows for compact circuit layouts in inverter legs.

Replacement Considerations

Consult official Infineon documentation for verified direct replacements or pin-compatible alternatives. Do not substitute based on generic parameter matching alone; verify mechanical dimensions and thermal characteristics.

FAQ

What is the maximum repetitive peak collector current?

The maximum repetitive peak collector current is 600 A under specified conditions.

What is the insulation test voltage specification?

The insulation test voltage is 6.5 kV RMS at 50 Hz for 1 minute.

What is the typical turn-on energy loss?

The typical turn-on energy loss is 14 mJ at 25°C junction temperature with a 2.4 Ω gate resistor.

DF300R12KE3HOSA1DF300R12KE3HOSA1
$103.58
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