ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT MOD 1200V 600A 3350W
- Series：PrimePACK™2
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：Trench Field Stop
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：2.05V @ 15V, 600A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：600 A
- Power - Max：3350 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：37 nF @ 25 V
Download product information
Overview
The DF600R12IP4DBOSA1 is a single IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology with an enlarged Emitter Controlled 4 diode. It features a PrimePACK™2 package and screw mounting. Key electrical parameters include a collector-emitter voltage (VCES) of 1200 V, continuous DC collector current (IC nom) of 600 A at TC=100°C, and repetitive peak collector current (ICRM) of 1200 A. The total power dissipation is 3.35 kW at TC=25°C. Gate-emitter peak voltage (VGES) is +/-20 V. Collector-emitter saturation voltage (VCEsat) ranges from 1.70 V to 2.10 V depending on junction temperature. Thermal resistance from junction to case is 45.0 K/kW for the IGBT and 37.0 K/kW for the diode. Operating junction temperature range is -40°C to 150°C.
Feature Summary
- High short circuit capability with self-limiting short circuit current
- Extended operation temperature range up to 150°C
- Collector-emitter saturation voltage with positive temperature coefficient
- High insulation strength with 4 kV AC isolation
Applications
- Chopper applications
Procurement Notes
Verify the specific ordering suffix BOSA1 against official documentation to confirm exact manufacturing lot or variant specifications. Confirm RoHS compliance status and check for any end-of-life notices or minimum order quantity requirements directly with the manufacturer or authorized distributors before placing orders.
Selection Notes
Select this component for high-power chopper circuits requiring robust short-circuit withstand capability. Ensure thermal management design accommodates the specified junction-to-case thermal resistance values. Verify that the gate drive voltage limits remain within the +/-20 V specification to prevent device damage during switching operations.
Part Context
This part belongs to the PrimePACK™2 series of IGBT modules from Infineon Technologies. It integrates fourth-generation trench field-stop IGBTs with emitter-controlled diodes. The module is designed for industrial applications demanding high power density and reliable performance under demanding electrical conditions.
Replacement Considerations
Consult official replacement lists for direct substitutes. Cross-referencing may require verifying pinout compatibility, thermal characteristics, and electrical ratings to ensure functional equivalence in existing designs.
