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The DF650R17IE4PB60BPSA1 is a dual IGBT module from Infineon Technologies, belonging to the Trenchstop IGBT4 - E4 series. It features a half-bridge configuration with a collector-emitter maximum voltage (VCEO) of 1.7 kV and a continuous collector current (IC) of 650 A at 25°C. The typical collector-emitter saturation voltage (VCE(sat)) is 2 V at 25°C junction temperature. The module utilizes PrimePACK™ 2 packaging, measuring 172 mm in length and 89 mm in width. It operates within a junction temperature range of -40°C to +150°C and incorporates an integrated NTC thermistor for thermal monitoring.
Verify the specific suffix B60BP against official Infineon documentation to confirm pinout compatibility and terminal configuration before integration. Ensure that the ordering information matches the exact part number required for the target application to avoid functional mismatches due to variant differences.
Select this component for applications requiring a 1.7 kV rating and 650 A current capacity in a half-bridge topology. Consider the PrimePACK™ 2 form factor for mechanical fit and the integrated NTC for thermal management needs. Compare against similar models like FF650R17IE4P if single-switch configurations are not required.
This module is part of the broader Trenchstop IGBT4 family, designed for industrial power electronics. It shares core semiconductor characteristics with other 1700V/650A variants but differs in packaging and specific terminal arrangements defined by its suffix codes.
Direct substitutes include FF650R17IE4P or FD650R17IE4, provided the circuit layout accommodates any differences in terminal configuration between the dual and half-bridge versions. Verify thermal interface material requirements when swapping modules.