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The DF80R07W1H5FPB50BPSA1 is a silicon IGBT module from Infineon Technologies, belonging to the DFXR07W1X5J series. It utilizes the EASY package format and features an N-channel configuration with a single switch topology. The component is designed for industrial applications and operates within a temperature range of -40°C to +150°C junction temperature. Key electrical specifications include a collector-emitter voltage (Vces) of 650 V and a continuous collector current (Ic) of 80 A at 25°C. The saturation voltage (Vcesat) is typically 1.75 V at 80 A. The module incorporates an integrated diode with a reverse recovery charge (Qrr) of 3.9 µC.
Verify the specific suffix B50 against official datasheets to confirm pinout and terminal configuration. Ensure the ordering code matches the exact RoHS compliance status required for your manufacturing process. Cross-reference the batch date code with your assembly timeline to manage shelf life constraints effectively during procurement planning.
Select this module when a 650 V rating and 80 A current capacity are required in a compact EASY package. Consider the thermal impedance characteristics for your heatsink design. Verify that the gate drive requirements align with the specified Vges limits and switching energy values provided in the technical documentation for optimal system efficiency.
This component is part of Infineon's DFXR07W1X5J family, which focuses on high-performance IGBT modules for medium-power applications. The EASY package offers a standardized footprint for easy integration into existing PCB layouts. This series is engineered to balance switching losses and conduction losses for improved overall system efficiency in power conversion stages.
Check for direct substitutes within the same DFXR series or compatible EASY package variants. Ensure voltage and current ratings meet or exceed original specifications. Verify thermal interface compatibility and pin alignment before substituting any alternative part numbers.