ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT MOD 1200V 20A 20MW
- Series：EconoPACK™ 2
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 20A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：20 A
- Power - Max：-
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：2.35 nF @ 25 V
Download product information
Overview
The DF80R12W2H3FB11BPSA1 is a silicon IGBT module manufactured by Infineon Technologies, belonging to the High Speed IGBT H3 series. It features a half-bridge configuration within an EasyPACK package. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 20 A at 25°C. The collector-emitter saturation voltage is specified at 1.7 V under standard test conditions. It operates within a junction temperature range of -40°C to +150°C and utilizes screw mount installation.
Feature Summary
- High-speed switching performance enabled by Trench Field-Stop technology
- Integrated NTC thermistor for precise thermal monitoring
- Compact EasyPACK packaging designed for efficient power conversion
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify component authenticity through authorized Infineon distributors or certified partners. Confirm RoHS compliance status via official documentation. Ensure storage conditions meet moisture sensitivity requirements prior to assembly. Cross-reference datasheet revisions to confirm parameter consistency with design specifications.
Selection Notes
Select this module for applications requiring high switching speeds and robust thermal management in compact form factors. Evaluate thermal resistance characteristics against system heat sink capabilities. Verify gate drive voltage compatibility with the 20 V maximum rating. Consider the 20 A current limit when sizing for peak load demands.
Part Context
This component is part of Infineon's High Speed IGBT H3 product line, which integrates advanced trench field-stop technology for optimized switching losses. The EasyPACK package family provides standardized mechanical dimensions for widespread industrial adoption. It serves as a key semiconductor switch in medium-power inversion and rectification circuits.
Replacement Considerations
Direct substitutes include F3L225R12W3H3B11BPSA1 and DF80R12W2H3F_B11. Verify pinout compatibility and thermal interface requirements before substitution. Ensure voltage and current ratings meet or exceed original design specifications.
