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The DGTD65T40S2PT is a 650V Field Stop Trench IGBT manufactured by Diodes Incorporated in the TO-247 package. It utilizes advanced Field Stop Trench IGBT Technology to deliver high switching performance and low power loss. Key electrical parameters include a collector-emitter saturation voltage of 1.8V at an IC of 40A, a typical reverse recovery time of 60ns at diF/dt of 820A/µs, and an turn-off energy of 0.4mJ at TC = +25°C.
Verify the specific ordering suffix matches the required package and tape/reel configuration. Confirm that the component meets all relevant safety and environmental compliance standards required for the target application. Ensure the datasheet version aligns with the manufacturing date code to guarantee parameter consistency.
Select this component when a 650V rating and 40A continuous current capacity are required. The low saturation voltage and fast reverse recovery make it suitable for high-frequency applications where efficiency is critical. Compare against similar models like DGTD65T50S1PT if higher current ratings are needed.
This part belongs to Diodes Incorporated's DGTD series of Field Stop Trench IGBTs. These devices are designed for medium-power switching applications requiring robust performance. The series offers various current ratings within the same voltage class to provide flexibility for different power levels.
The DGTD65T50S1PT is a documented alternative within the same product family offering similar technology but with a 50A rating. Verify pin compatibility and thermal requirements before substitution.