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Product Detailed Parameters
- Description：MOSFET POWERQFN 3X3 N 650V
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.6Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：209 pF @ 350 V
- FET Feature：-
- Power Dissipation (Max)：31.2W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-QFN (3x3)
- Package / Case：8-PowerVDFN
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Overview
The DI001N65PTK is an N-Channel Power MOSFET from Diotec Semiconductor designed for commercial and industrial applications. It features a 650 V drain-source voltage rating and a continuous drain current of 1 A at 25°C, with a maximum on-state resistance of 1.6 Ω. The device operates within a junction temperature range of -55°C to +150°C and dissipates up to 31.2 W. Packaged in a compact QFN3x3 (DFN3030) format, it offers controlled avalanche characteristics, low gate charge, and fast switching times suitable for power factor correction and flyback converters.
Feature Summary
- ESD protected gate structure
- Controlled avalanche characteristic
- Tiny, space saving package with low profile height
- Fast switching times with low gate charge
Applications
- Power Factor Correction (PFC)
- Flyback Converters
- Power Supplies
- DC Drives
Procurement Notes
Verify the specific suffix when ordering. The standard version is intended for commercial and industrial grade use. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes qualification status. Confirm that the required reliability level matches the component's standard commercial/industrial designation before procurement.
Selection Notes
Select this component for designs requiring high-voltage handling in a minimal footprint. The 650 V rating supports high-side switching in offline power supplies. Ensure thermal management aligns with the specified RthJA of less than 50 K/W on a standard PCB pad. Verify that the 1 A continuous current meets the load requirements under expected operating temperatures.
Part Context
This part belongs to Diotec's N-Channel Power MOSFET family, specifically utilizing the DFN3030 (QFN3x3) surface-mount package. It is engineered for general-purpose power switching where size constraints are critical. The datasheet provides SPICE models and STEP files for simulation and mechanical integration.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching the 650 V rating, 1 A current capacity, and DFN3030 package dimensions.
