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Product Detailed Parameters
- Description：DI002N10PWK-AQ
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：250mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.4 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：454 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：6-QFN (2x2)
- Package / Case：6-PowerUDFN
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Overview
The DI002N10PWK-AQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a QFN2x2 package. It features a Drain-Source voltage (VDSS) of 100 V and continuous Drain current (ID) of 2 A at 25°C. The device has a maximum on-state resistance (RDS(on)) of 250 mΩ at VGS = 10 V and ID = 2 A. Peak Drain current (IDM) reaches 8.0 A. Power dissipation (PD) is rated at 2.0 W. Operating junction temperature ranges from -55°C to +150°C. Storage temperature spans -55°C to +150°C.
Feature Summary
- Tiny, space-saving QFN2x2 package with low profile height
- Low on-state resistance for efficient power handling
- Fast switching times with low gate charge
- Compliant to RoHS standards without exemptions
Applications
- Power Management Units
- Battery powered devices
- DC-DC Converters
- Load Switches
Procurement Notes
Verify the suffix -AQ indicates the component is currently undergoing AEC-Q101 qualification rather than holding full compliance. Confirm the specific revision date of the datasheet before finalizing design-in decisions. Ensure PCB layout accommodates the required copper pad area for optimal thermal performance as specified in the mechanical data section.
Selection Notes
Select this component for applications requiring compact form factors and moderate current handling capabilities up to 2 A. The low RDS(on) makes it suitable for battery-powered systems where efficiency is critical. Consider the thermal resistance characteristics when designing heat dissipation strategies for enclosed environments or high ambient temperatures.
Part Context
This part belongs to Diotec's lineup of discrete semiconductors designed for commercial and industrial grade applications. The QFN2x2 package allows for miniaturization in modern electronic designs. The product line emphasizes standard availability and fast worldwide delivery, catering to diverse consumer and industrial electronics needs.
Replacement Considerations
Check for other Diotec N-Channel MOSFETs in similar packages if supply constraints exist. Verify pinout compatibility and electrical parameters against alternative suppliers' offerings. Ensure any substitute meets the same thermal and voltage requirements for the intended application.
