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The DI003N03SQ2 is a dual N-channel power MOSFET manufactured by Diotec Semiconductor in an SO-8 package. It features a drain-source voltage (VDSS) of 30 V and a continuous drain current (ID) of 3 A at 25°C, with a maximum junction temperature of 150°C. The device exhibits a low on-state resistance (RDS(on)) of less than 50 mΩ at VGS = 5 V and ID = 1 A. Total gate charge (Qg) is typically 4.5 nC. Power dissipation is rated at 1.6 W per device and 2 W per MOSFET at 25°C ambient temperature.
Verify the specific suffix when ordering. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes parts currently undergoing AEC-Q101 qualification. Confirm the required reliability grade matches the application needs before procurement.
Select this component for applications requiring a compact dual N-channel solution with low RDS(on). Ensure thermal management supports the specified power dissipation limits. Verify that the 30 V breakdown voltage and 3 A current ratings exceed circuit requirements under all operating conditions.
This part belongs to the DI0XX series from Diotec Semiconductor. It is designed for standard commercial and industrial applications. Automotive-grade variants are available through specific suffixes indicating AEC-Q101 compliance or qualification status.
No public confirmed substitute part numbers are documented for this component.