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Product Detailed Parameters
- Description：DI004N06PWK-AQ
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：57mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12 nC @ 0 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：651 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.65W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：6-QFN (2x2)
- Package / Case：6-PowerUDFN
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Overview
The DI004N06PWK-AQ is an N-Channel Power MOSFET in a QFN2x2 package. It features a drain-source voltage (VDSS) of 60 V and a continuous drain current (ID) of 4 A at 25°C. The on-state resistance (RDS(on)) is less than 57 mΩ at VGS = 10 V and ID = 4 A, or 70 mΩ at VGS = 4.5 V and ID = 3 A. Peak drain current reaches 16 A. Power dissipation is 1.65 W at 25°C. Operating junction temperature ranges from -55°C to +150°C. Total gate charge is 12 nC.
Feature Summary
- Tiny, space-saving QFN2x2 package with low profile height
- Low on-state resistance for efficient power management
- Fast switching times with low gate charge
- AEC-Q101 qualification status indicated by the -AQ suffix
Applications
- Power Management Units
- Battery powered devices
- DC-DC Converters
- Load Switches
Procurement Notes
Verify the specific ordering suffix when purchasing. The -AQ suffix indicates the component is in AEC-Q101 qualification. Confirm that the required automotive grade aligns with your project specifications before finalizing orders. Ensure compatibility with standard surface mount assembly processes.
Selection Notes
Select this component for applications requiring compact footprint and moderate current handling up to 4 A. The low RDS(on) minimizes conduction losses. Verify thermal management requirements as power dissipation is limited to 1.65 W without adequate PCB copper pad area. Suitable for commercial and industrial grade environments.
Part Context
This part belongs to Diotec Semiconductor's N-Channel Power MOSFET lineup designed for general-purpose switching. It utilizes silicon technology in a lead-free, halogen-free QFN2x2 case. The device is compliant with RoHS directives and REACH regulations, supporting modern environmental standards for electronic components.
Replacement Considerations
Check for alternative parts with matching VDSS, ID, and RDS(on) specifications if sourcing issues arise. Ensure any substitute maintains the QFN2x2 footprint and thermal characteristics. Verify AEC-Q101 compliance if automotive reliability is mandatory.
