DI006H03SQ

$1.88

Description：MOSFET 2N/2P-CH 30V 6A 8SO
Series：-

SKU:1c590fa999b3 Category: FET, MOSFET Arrays Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N/2P-CH 30V 6A 8SO
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N and 2 P-Channel (Full Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：6A (Ta), 4.2A (Ta)
Rds On (Max) @ Id, Vgs：25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.7nC @ 10V, 11.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：590pF @ 15V, 631pF @ 15V
Power - Max：1.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：Automotive
Qualification：AEC-Q101

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DI006H03SQ

Overview

The DI006H03SQ is an N/P-Channel Power MOSFET H-Bridge in a surface-mount SO-8 package. It features a drain-source voltage of 30 V and continuous drain currents of 6 A (N-channel) and -4.2 A (P-channel). The on-state resistance is less than 25 mΩ for the N-channel and 50 mΩ for the P-channel. Total power dissipation is 1.5 W, with a maximum junction temperature of 150°C. Gate-source voltage limits are ±20 V. The device includes SPICE models and STEP files.

Feature Summary

Integrated N/P-MOSFET configuration designed specifically for H-bridge applications
Low profile, space-saving SO-8 package construction
Fast switching times combined with low gate charge characteristics
Compliant with RoHS, REACH, and Conflict Minerals regulations

Applications

DC/DC Converters
Power Supplies
DC Drives
Synchronous Rectifiers

Procurement Notes

Verify the specific ordering suffix when purchasing. The standard version is commercial or industrial grade. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ indicates AEC-Q101 qualification. Confirm that the required automotive reliability standards match the ordered part number before finalizing procurement to ensure correct component grading.

Selection Notes

Select this component for designs requiring integrated N/P-channel pairs in a compact footprint. Ensure the application operates within the 30 V drain-source voltage limit and 1.5 W power dissipation rating. Verify thermal management capabilities, as the junction-to-ambient thermal resistance depends heavily on the copper pad area on the printed circuit board during mounting.

Part Context

This component belongs to the Diotec Semiconductor discrete transistor portfolio. It is categorized under enhancement mode MOSFETs intended for general-purpose switching and amplification tasks. The product line targets commercial and industrial electronics markets where efficient power conversion and compact packaging are primary design constraints.