DI006N06PW-AQ

$0.11

Description：DI006N06PW-AQ
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:7ecde959834f Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：DI006N06PW-AQ
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：65 V
Current - Continuous Drain (Id) @ 25°C：6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：20mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：403 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.67W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：6-QFN (2x2)
Package / Case：6-PowerUDFN

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DI006N06PW-AQ

Overview

The DI006N06PW-AQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a QFN2x2 package. It features a Drain-Source voltage (VDSS) of 65 V and continuous Drain current (ID) of 6 A at 25°C. The device offers low on-state resistance (RDS(on)) below 20 mΩ at VGS=10V and 30 mΩ at VGS=4.5V. Key dynamic characteristics include a total gate charge (Qg) of 10 nC and fast switching times with turn-on delay of 8.5 ns and rise time of 23 ns. Thermal performance includes a junction-to-ambient thermal resistance (RthJA) of 75 K/W when mounted on a PCB with a 645 mm² copper pad.

Feature Summary

Tiny, space-saving QFN2x2 package with low profile height
Low on-state resistance for efficient power handling
Fast switching times and low gate charge
AEC-Q101 qualified for automotive reliability

Applications

Power Management Units
Battery powered devices
DC-DC Converters
Load Switches

Procurement Notes

Verify the specific suffix -AQ to confirm AEC-Q101 qualification status, as standard versions may differ. Ensure compatibility with RoHS directives and REACH regulations during sourcing. Confirm that the supplier provides official datasheets matching version 2026-03-25. Check for conflict minerals compliance documentation if required by your supply chain standards. Validate packaging details, such as tape and reel specifications, against your assembly equipment requirements.

Selection Notes

Select this component for applications requiring compact size and high efficiency in low-voltage environments. The 65V rating suits battery-powered systems where voltage spikes are minimal. Consider the 6A continuous current limit and thermal constraints when designing heat dissipation strategies. The low gate charge supports high-frequency switching applications. Evaluate the RDS(on) values at your specific operating VGS levels to ensure optimal conduction losses.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET lineup, designed for commercial and industrial grade applications. The QFN2x2 package allows for miniaturization in dense PCB layouts. The -AQ suffix indicates automotive qualification, expanding its potential use cases beyond standard consumer electronics into more demanding automotive environments.

Replacement Considerations

Check for direct substitutes within the DI006 series or other manufacturers offering similar QFN2x2 N-MOSFETs with comparable VDSS and ID ratings. Verify pinout compatibility and thermal resistance values before substitution.