DI006N06PW

$0.10

Description：DI006N06PW
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:93047e09d089 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：DI006N06PW
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：65 V
Current - Continuous Drain (Id) @ 25°C：6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：20mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：403 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.67W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：6-QFN (2x2)
Package / Case：6-PowerUDFN

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DI006N06PW

Overview

The DI006N06PW is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a QFN2x2 package. It features a Drain-Source voltage (VDSS) of 65 V and continuous Drain current (ID) of 6 A at 25°C. The device exhibits low on-state resistance (RDS(on)) with a maximum of 20 mΩ at VGS=10V and ID=6A, or 30 mΩ at VGS=4.5V and ID=5A. Maximum power dissipation (PD) is 1.67 W when mounted on a PCB with a 645 mm² copper pad. The junction temperature range spans from -55°C to +150°C.

Feature Summary

Tiny, space-saving QFN2x2 package with low profile height
Low on-state resistance for efficient power handling
Fast switching times and low gate charge
Compliant to RoHS standards without exemptions

Applications

Power Management Units
Battery powered devices
DC-DC Converters
Load Switches

Procurement Notes

Verify the specific ordering suffix required for your application. Standard versions are commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes AEC-Q101 qualification. Confirm these designations match your reliability requirements before procurement.

Selection Notes

Select this component for applications requiring compact surface-mount solutions with moderate voltage ratings. Ensure thermal management accounts for the 1.67 W dissipation limit on standard PCB pads. Verify that the 65 V breakdown voltage and 6 A current capacity exceed circuit demands under all operating conditions.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET lineup designed for modern electronics. It utilizes a miniature QFN2x2 case material rated UL 94V-0. The product is subject to REACH regulations and conflict mineral reporting requirements. It is available with SPICE models and STEP files for design integration.