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Product Detailed Parameters
- Description：MOSFET POWERQFN 2X2 P -20V -6A 0
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：25mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：1242 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-QFN (2x2)
- Package / Case：8-PowerUDFN
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Overview
The DI006P02PW is a P-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a compact QFN2x2 package. It features a drain-source voltage (VDSS) of -20 V and a continuous drain current (ID) of -6 A at 25°C. The device exhibits a low on-state resistance (RDS(on)) of less than 25 mΩ at VGS = 4.5 V and ID = 6 A. With a power dissipation (PD) of 2 W and a maximum junction temperature (Tjmax) of 150°C, it supports fast switching times and low gate charge characteristics.
Feature Summary
- Low profile, space-saving QFN2x2 package design
- Low on-state resistance for efficient conduction
- Fast switching times with low gate charge
- Avalanche rated capability
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Power Tools
- Synchronous Rectifiers
Procurement Notes
Verify the specific ordering suffix to confirm compliance requirements. Standard versions are commercial/industrial grade. Suffixes -Q indicate AEC-Q101 compliant status, while -AQ denotes AEC-Q101 qualified status. Confirm mechanical data such as tape and reel specifications and soldering conditions before integration.
Selection Notes
Select this component for applications requiring a compact P-Channel MOSFET with high current handling in a small footprint. Ensure the operating voltage does not exceed -20 V and that thermal management accommodates the 2 W power dissipation limit. Verify gate drive levels against the threshold voltage specifications for optimal RDS(on) performance.
Part Context
This part belongs to Diotec Semiconductor's discrete semiconductor portfolio, specifically within the MOSFET category. It is designed for standard commercial and industrial applications, offering a balance of performance and size efficiency suitable for modern electronic circuit designs requiring reliable switching capabilities.
Replacement Considerations
Check for variants with different suffixes (-Q or -AQ) if automotive qualification is required. No other specific substitute part numbers are documented in the provided source material.
