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The DI014N25D1-AQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a TO-252AA (D-PACK) package. It features a drain-source voltage of 250 V and a continuous drain current of 10 A at 25°C case temperature. The device utilizes advanced trench technology to achieve a low on-state resistance of approximately 240 mΩ. It supports a power dissipation of 73.5 W and operates within a junction temperature range of -55°C to +150°C. The component is avalanche rated with a single pulse energy capability of 9.9 mJ.
Verify the specific suffix designation when ordering. The standard DI014N25D1 represents commercial or industrial grade components. The -AQ suffix indicates that the part is currently undergoing AEC-Q101 qualification rather than holding full compliance certification. Confirm the exact reliability status required for your application before procurement to ensure alignment with project specifications.
Select this component for designs requiring a 250 V rating with moderate current handling capabilities up to 10 A. The low gate charge and fast switching characteristics make it appropriate for efficient power conversion circuits. Ensure adequate thermal management is provided, as the power dissipation rating depends heavily on the case temperature conditions during operation.
This device belongs to Diotec's portfolio of discrete semiconductor solutions designed for modern electronics. It is manufactured by Diotec Semiconductor AG, a German company specializing in diodes, rectifiers, and transistors. The product line targets both commercial and automotive sectors, offering various qualification grades to meet different industry standards.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official distributor catalogs or manufacturer cross-reference guides for potential alternatives.