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The DI017N06PQ is an N-Channel Power MOSFET in a QFN5x6 package. It features a drain-source voltage (VDSS) of 60 V and a continuous drain current (ID) of 17 A at 25°C. The on-state resistance (RDS(on)) is less than 33 mΩ at VGS=10V, ID=15A. Maximum power dissipation is 21 W at 25°C. The junction temperature range is -55 to +175°C. Single pulse avalanche energy is 3.7 mJ.
Verify the specific suffix when ordering. The standard version is commercial grade. Suffix -Q indicates AEC-Q101 compliance. Suffix -AQ indicates AEC-Q101 qualification. Confirm these details match your reliability requirements before procurement.
Select this component for applications requiring a compact footprint and high current handling up to 17 A. Ensure thermal management supports the 21 W dissipation rating. Verify that the 60 V breakdown voltage meets circuit requirements. Check if automotive grades are needed for specific environments.
This part belongs to Diotec Semiconductor's N-Channel Power MOSFET lineup. It utilizes a QFN5x6 case style. The device is designed for general-purpose switching applications. It complies with RoHS and REACH regulations.
No public substitute part numbers are documented for this component.