DI017N06PQ

DI017N06PQ

$0.13
  • Description:DI017N06PQ
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk

SKU:0e30ac9ce13e Category: Brand:

  
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Product Detailed Parameters

  • Description:DI017N06PQ
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:33mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1260 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):21W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-QFN (5x6)
  • Package / Case:8-PowerTDFN

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DI017N06PQ

Overview

The DI017N06PQ is an N-Channel Power MOSFET in a QFN5x6 package. It features a drain-source voltage (VDSS) of 60 V and a continuous drain current (ID) of 17 A at 25°C. The on-state resistance (RDS(on)) is less than 33 mΩ at VGS=10V, ID=15A. Maximum power dissipation is 21 W at 25°C. The junction temperature range is -55 to +175°C. Single pulse avalanche energy is 3.7 mJ.

Feature Summary

  • Low profile, space-saving package design
  • Low on-state resistance for efficient conduction
  • Fast switching times with low gate charge
  • Rated for single pulse avalanche energy

Applications

  • DC/DC Converters
  • Power Supplies
  • DC Drives
  • Power Tools
  • Synchronous Rectifiers

Procurement Notes

Verify the specific suffix when ordering. The standard version is commercial grade. Suffix -Q indicates AEC-Q101 compliance. Suffix -AQ indicates AEC-Q101 qualification. Confirm these details match your reliability requirements before procurement.

Selection Notes

Select this component for applications requiring a compact footprint and high current handling up to 17 A. Ensure thermal management supports the 21 W dissipation rating. Verify that the 60 V breakdown voltage meets circuit requirements. Check if automotive grades are needed for specific environments.

Part Context

This part belongs to Diotec Semiconductor's N-Channel Power MOSFET lineup. It utilizes a QFN5x6 case style. The device is designed for general-purpose switching applications. It complies with RoHS and REACH regulations.

Replacement Considerations

No public substitute part numbers are documented for this component.

DI017N06PQDI017N06PQ
$0.13
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