DI018C03PT

Overview

The DI018C03PT is a dual N+P channel power MOSFET in a QFN3x3 package. The N-channel (Q1) offers a drain-source voltage of 30 V, continuous current of 27 A at 25°C, and on-resistance under 9.3 mΩ. The P-channel (Q2) provides -30 V breakdown, -18 A continuous current, and resistance below 30.1 mΩ. Total gate charge is 12 nC for Q1 and 20 nC for Q2. Thermal resistance junction-to-case is less than 11.5 K/W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Integrates two complementary MOSFETs into a single compact unit
• Features low profile height and space-saving construction
• Designed for fast switching times with low gate charge
• Compliant with RoHS, REACH, and Conflict Minerals regulations

Applications

• Power management units
• Battery powered devices
• Load switches and polarity protection circuits

Procurement Notes

Verify the specific ordering suffix when purchasing. The standard version is commercial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification status. Confirm these details against the manufacturer's latest documentation before finalizing orders to ensure correct automotive or industrial grading.

Selection Notes

Select this component for applications requiring integrated N- and P-channel control within a minimal footprint. Evaluate thermal constraints carefully, as the small QFN3x3 package limits heat dissipation compared to larger packages. Ensure the driving circuit can handle the specified gate threshold voltages and total gate charge requirements for optimal switching performance.

Part Context

This device belongs to Diotec Semiconductor's portfolio of high-density power solutions. It utilizes advanced trench technology to achieve low on-state resistance within a tiny form factor. The product line targets modern electronics where board space is limited but efficient power handling remains critical for system longevity.

Replacement Considerations

No public confirmed substitute part numbers are available.