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Product Detailed Parameters
- Description：MOSFET DPAK N 60V 0.024OHM 175C
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：35mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：590 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：45W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DI020N06D1 is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a TO-252AA (D-PACK) package. It features a drain-source voltage of 60 V and a continuous drain current of 20 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 35 mΩ at VGS = 10 V and ID = 20 A. Key electrical parameters include a gate-source threshold voltage ranging from 1.2 V to 2.5 V, a total gate charge of 25.3 nC, and a power dissipation capacity of 45 W at 25°C. The component supports a junction temperature up to 175°C and includes avalanche energy ratings.
Feature Summary
- Advanced Trench Technology for optimized performance
- Low on-state resistance to minimize conduction losses
- Fast switching times suitable for high-frequency applications
- Avalanche rated capability for robust operation
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Synchronous Rectifiers
Procurement Notes
Verify the specific suffix requirements against your design needs. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes AEC-Q101 qualification. Confirm thermal management specifications, as power dissipation varies significantly between case temperatures of 25°C and 100°C. Ensure compatibility with RoHS and REACH regulations if required by your manufacturing standards.
Selection Notes
Select this component when a 60V N-Channel MOSFET with low RDS(on) is required for compact designs. Consider the thermal resistance values (RthJC and RthJA) for proper heat sinking strategies. Evaluate the gate charge and switching times against your driver capabilities to ensure efficient operation. Verify that the single-pulse avalanche energy rating meets the transient stress conditions of your specific circuit topology.
Part Context
This part belongs to Diotec's standard discrete semiconductor portfolio, specifically within their N-Channel Power MOSFET line. It utilizes advanced trench technology to achieve low on-state resistance and fast switching characteristics. The device is designed for commercial and industrial applications, offering a balance of performance and reliability in a widely used surface-mount package.
Replacement Considerations
Check for DI020N06D1-Q or DI020N06D1-AQ variants if automotive-grade specifications are needed. Ensure any substitute maintains the same TO-252AA footprint and pinout configuration. Verify that replacement parts meet or exceed the 60V breakdown voltage and 20A current handling capabilities.
