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Product Detailed Parameters
- Description：MOSFET PWRQFN 3X3 -60V 0.045OHM
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：20A
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：29.7W
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerQFN 3x3
- Package / Case：-
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Overview
The DI020P06PT is a P-Channel Power MOSFET manufactured by Diotec Semiconductor, designed for commercial and industrial applications. It features a QFN3x3 (DFN3030) package with a maximum drain-source voltage of -60 V and a continuous drain current of -20 A at 25°C. The device exhibits a low on-state resistance of typically 36 mΩ at VGS = 10 V and up to 45 mΩ at VGS = 4.5 V. Key electrical parameters include a gate-source threshold voltage ranging from 1.0 V to 2.5 V, a total gate charge of 34 nC, and a power dissipation capacity of 35.7 W at 25°C. The component supports a junction temperature range of -55°C to +175°C and includes avalanche energy ratings of 26.4 mJ.
Feature Summary
- Compact DFN3030 package design for space-constrained layouts
- Low on-state resistance for efficient power management
- Fast switching characteristics with minimal gate charge
- High thermal stability supporting extended operating temperatures
Applications
- Power Management Units
- Battery powered devices
- Load Switches
- Polarity Protection circuits
Procurement Notes
Verify the specific ordering suffix when purchasing. The standard DI020P06PT denotes commercial/industrial grade compliance. Suffixes such as -Q indicate AEC-Q101 compliant status, while -AQ signifies AEC-Q101 qualified status. Confirm that the required automotive or standard grade matches the project specifications before finalizing orders to ensure correct component selection.
Selection Notes
Select this component for designs requiring a compact P-Channel MOSFET with high current handling capabilities in limited board areas. The low RDS(on) minimizes conduction losses, making it suitable for battery-operated systems where efficiency is critical. Ensure the gate drive voltage meets the threshold requirements for optimal performance at the desired load current levels.
Part Context
This part belongs to Diotec's portfolio of power semiconductor solutions, specifically targeting modern electronic devices requiring reliable switching components. The DI020P06PT utilizes silicon technology within a lead-free, RoHS-compliant housing. It represents a balance between high performance metrics and physical footprint reduction, aligning with industry trends toward miniaturization in consumer and industrial electronics.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter overlaps with potential alternatives before implementation.
