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Product Detailed Parameters
- Description：MOSFET DPAK P -60V -22A
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：45mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2098 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：43W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DI022P06D1 is a P-Channel Power MOSFET manufactured by Diotec Semiconductor, utilizing advanced trench technology. It features a drain-source voltage of -60 V and a continuous drain current of -22 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 45 mΩ at VGS = -10 V and ID = -10 A. With a power dissipation rating of 43 W and an avalanche energy capability of 30 mJ, it supports fast switching times including turn-on delay of 11 ns and fall time of 4 ns. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Advanced trench technology for low on-state resistance
- Avalanche rated with 30 mJ single pulse energy capability
- Fast switching characteristics with low gate charge
- Compliant with RoHS, REACH, and Conflict Minerals regulations
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Synchronous Rectifiers
Procurement Notes
Verify the specific suffix when ordering. The standard version is commercial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification in progress. Confirm package type TO-252AA (D-PACK) and tape-and-reel quantity of 2500 units per 13-inch reel. Ensure thermal management aligns with the specified RthJC of 2.9 K/W.
Selection Notes
Select this component for applications requiring high current handling in a compact D-PACK footprint. The low on-state resistance minimizes conduction losses. Consider the -Q variant if automotive reliability standards are required. Evaluate thermal performance based on the 35 K/W junction-to-ambient resistance for PCB mounting scenarios.
Part Context
This part belongs to Diotec's P-Channel MOSFET lineup designed for general-purpose power switching. It shares the TO-252AA mechanical outline common across the series but differs in electrical ratings compared to N-Channel variants like the DI020N06D1. The marking code '06P450' identifies the specific device on the casing.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
FAQ
What is the maximum single pulse avalanche energy?
The DI022P06D1 is rated for 30 mJ of single pulse avalanche energy under test conditions of ID = -24.5 A, VG = -10 V, L = 0.1 mH, and RG = 25 Ω.
How does the on-state resistance vary with gate voltage?
At VGS = -10 V and ID = -10 A, the maximum RDS(on) is 45 mΩ. At a lower gate drive of VGS = -4.5 V and ID = -8 A, the maximum RDS(on) increases to 60 mΩ.
