DI025N20PQ

$0.63

Description：MOSFET N , 200V 25A 48mW
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:65f615e15f9c Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N , 200V 25A 48mW
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：48mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：28 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1650 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：135W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-QFN (5x6)
Package / Case：8-PowerTDFN

Download product information

DI025N20PQ

Overview

The DI025N20PQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a QFN5x6 (TDSON-8 / DFN5060) package. It features a drain-source voltage of 200 V and a continuous drain current of 25 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 48 mΩ and supports a power dissipation of 135 W. It operates within a junction temperature range of -55°C to +150°C and includes avalanche-rated capabilities with a single pulse energy of 320 mJ.

Feature Summary

Logic-level gate drive for efficient control
Low profile and space-saving package design
Avalanche rated with 100% avalanche testing
Fast switching times and low gate charge

Applications

DC/DC Converters
Power Supplies and UPS systems
DC Drives
Power Tools
Synchronous Rectifiers

Procurement Notes

Verify the specific suffix when ordering. The standard version is commercial or industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes parts currently undergoing AEC-Q101 qualification. Confirm these details against the latest datasheet before procurement to ensure the correct reliability grade is selected for the intended application environment.

Selection Notes

Select this component for applications requiring high voltage blocking capability up to 200 V in a compact footprint. The low thermal resistance facilitates effective heat management in dense layouts. Ensure the driving circuit can provide sufficient gate voltage to minimize on-state resistance. Consider the avalanche rating if the application involves inductive load switching where transient energy absorption may occur.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET lineup designed for general-purpose power switching. It utilizes silicon technology optimized for low conduction losses. The QFN5x6 package provides a balance between electrical performance and board space efficiency, targeting modern electronics that demand high power density without compromising thermal stability.