DI025N25PQ

$0.79

Description：DI025N25PQ
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:b5258ee0779a Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：DI025N25PQ
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：250 V
Current - Continuous Drain (Id) @ 25°C：25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：80mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1550 pF @ 125 V
FET Feature：-
Power Dissipation (Max)：140W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-QFN (5x6)
Package / Case：8-PowerTDFN

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DI025N25PQ

Overview

The DI025N25PQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a QFN5x6 (TDSON-8 / DFN5060) package. It features a drain-source voltage of 250 V and a continuous drain current of 25 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 80 mΩ at VGS = 10 V and ID = 20 A. Key electrical parameters include a gate-source threshold voltage ranging from 2 V to 4 V, a total gate charge of 24 nC, and a single pulse avalanche energy rating of 320 mJ. The component supports a power dissipation of 140 W at 25°C and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Logic level gate drive capability for efficient control
Low profile, space-saving QFN5x6 package design
Avalanche rated with 100% avalanche testing
Fast switching times and low gate charge

Applications

DC/DC Converters
Power Supplies
DC Drives
Power Tools
Synchronous Rectifiers

Procurement Notes

Verify the specific ordering suffix when purchasing. The base model DI025N25PQ represents the commercial/industrial grade standard version. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes parts currently undergoing AEC-Q101 qualification. Confirm the required reliability grade matches your application needs before finalizing orders.

Selection Notes

Select this component for designs requiring a compact footprint with high current handling capabilities. The logic level gate drive simplifies driver circuit requirements. Ensure thermal management strategies account for the 140 W power dissipation limit at 25°C case temperature. Verify that the 250 V breakdown voltage provides adequate margin for your specific DC bus or supply voltages.

Part Context

This part belongs to Diotec's lineup of discrete semiconductor solutions, specifically within their N-Channel Power MOSFET category. The manufacturer specializes in producing both standard and customized components for industrial and consumer electronics. The DI025N25PQ utilizes a Pb-free, halogen-free construction compliant with RoHS and REACH regulations.